? semiconductor components industries, llc, 2010 september, 2010 ? rev. 1 publication order number: BF422/d 1 BF422 high voltage transistors npn silicon features ? this is a pb ? free device* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 250 vdc collector ? base voltage v cbo 250 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous i c 50 madc collector current ? peak i cm 100 ma total device dissipation (note 1) @ t a = 25 c derate above 25 c p d 830 6.6 mw mw/ c operating and storage junction temperature range t j , t stg ? 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient r ja 150 c/w thermal resistance, junction ? to ? lead r jl 68 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. mounted on a fr4 board with 200 mm 2 of 1 oz copper and lead length of 5 mm. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com BF422 = device code a = assembly location y = year ww = work week =pb ? free package to ? 92 (to ? 226aa) case 29 ? 11 style 14 BF422 ayww device package shipping ? ordering information BF422g to ? 92 (pb ? free) 5000 units/box ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. collector 2 3 base 1 emitter (note: microdot may be in either location) marking diagram 1 2 3 1 2 bent lead tape & reel ammo pack straight lead bulk pack 3
BF422 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 1) (i c = 1.0 madc, i b = 0) v (br)ceo 300 ? vdc collector ? base breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 300 ? vdc emitter ? base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 5.0 ? vdc collector cutoff current (v cb = 200 vdc, i e = 0) i cbo ? 0.01 adc emitter cutoff current (v eb = 5.0 vdc, i c = 0) i ebo ? 100 nadc on characteristics dc current gain (i c = 25 madc, v ce = 20 vdc) h fe 50 ? ? collector ? emitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v ce(sat) ? 0.5 vdc base ? emitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v be(sat) ? 2.0 vdc small ? signal characteristics current gain ? bandwidth product (i c = 10 madc, v ce = 10 vdc, f = 20 mhz) f t 60 ? mhz common emitter feedback capacitance (v cb = 30 vdc, i e = 0, f = 1.0 mhz) c re ? 1.6 pf 1. pulse test: pulse width 300 s; duty cycle 2.0%.
BF422 http://onsemi.com 3 c, capacitance (pf) figure 1. dc current gain v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c eb @ 1mhz figure 2. capacitance i c , collector current (ma) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 80 70 50 30 20 10 t j = 25 c v ce = 20 v f = 20 mhz f, current-gain bandwidth (mhz) t 1.0 i c , collector current (ma) figure 3. current ? gain ? bandwidth v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 100 1.0 c cb @ 1mhz 60 40 v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ -55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ -55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ -55 c, v ce = 10 v figure 4. ?on? voltages i c , collector current (ma) 120 0.1 1.0 10 100 80 60 0 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 20 40
BF422 http://onsemi.com 4 package dimensions to ? 92 (to ? 226) case 29 ? 11 issue am style 14: pin 1. emitter 2. collector 3. base notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x ? x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x ? x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 --- n 2.04 2.66 p 1.50 4.00 r 2.93 --- v 3.43 --- 1 t straight lead bulk pack bent lead tape & reel ammo pack on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. BF422/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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